The VCSEL array chip was mounted on a diamond heat spreader, making the most of diamond’s very excessive thermal conductivity. In 2001, greater than 1 W CW power and 10 W pulsed energy at room temperature have been reported from a 19-element array. Greater than 2 W continuous-wave (CW) operation at -10 degrees Celsius heat-sink temperature was also reported in 1998 from a VCSEL array consisting of 1,000 elements, corresponding to a power density of 30 W/cm2. VCSELs. The excessive energy degree achieved was largely as a consequence of improvements in wall-plug efficiency and packaging. Moreover, at high aluminium concentrations, an oxide could be formed from AlGaAs, and this oxide can be used to limit the present in a VCSEL, enabling very low threshold currents.
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